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IXFH 12N120
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD Outline
g fs
V DS = 20 V; I D = 0.5 I D25 , pulse test
6
10
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3400
280
pF
pF
1
2
3
C rss
t d(on)
105
24
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , 0.5 I D25
25
ns
t d(off)
R G = 1.5 ? (External)
35
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
17
ns
Dim.
Millimeter
Inches
Q g(on)
95
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
22
50
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
R thJC
0.25
K/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
R thCK
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
I SM
V SD
t rr
I rm
Q RM
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
6.0
1.2
12
48
1.5
300
A
A
V
ns
A
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1
6,162,665
6,534,343 6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
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